GaAs砷化镓衬底

内容简介

详细说明:

由LEC或VGF生长的砷化镓单晶制成。通过掺杂碳、硅、碲或锌等获得所需的电性能。n型或p型高电阻(>107Ωcm)或低电阻(<10-2Ωcm)半导体。晶圆表面极低污染,其质量适合直接用于外延工艺。

用途:

RF-Electronic:

  • Mobile phones
  • Wireless LAN
  • Automotive (Radar)

Opto-Electronic:

  • Lighting applications
  • Screens and displays
  • 3D imaging

Photovoltaic:

  • Unmanned aerial vehicle
  • Handhelds
  • Automotive (PV roof)

规格:

WAFER SIZE:3″,4″, 6″
Conduction range: N TYPE /P TYPE
Dopand: C,SI,ZN,TE
Growth method:VGF

产品联络人

陆 晨 Levi

HIGH TECH & INNOVATIVE MATERIAL BUSINESS UNIT

10F, Building 5, No.2388 ChenHang Road, Minhang District, Shanghai, China (Zip: 201114)
TEL:86-21-6422-0458 ext.279
e-mail: levi.lu@topco-global.com


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