GaAs砷化镓衬底
内容简介
详细说明:
由LEC或VGF生长的砷化镓单晶制成。通过掺杂碳、硅、碲或锌等获得所需的电性能。n型或p型高电阻(>107Ωcm)或低电阻(<10-2Ωcm)半导体。晶圆表面极低污染,其质量适合直接用于外延工艺。
用途:
RF-Electronic:
- Mobile phones
- Wireless LAN
- Automotive (Radar)
Opto-Electronic:
- Lighting applications
- Screens and displays
- 3D imaging
Photovoltaic:
- Unmanned aerial vehicle
- Handhelds
- Automotive (PV roof)
规格:
WAFER SIZE:3″,4″, 6″
Conduction range: N TYPE /P TYPE
Dopand: C,SI,ZN,TE
Growth method:VGF
产品联络人
陆 晨 Levi
HIGH TECH & INNOVATIVE MATERIAL BUSINESS UNIT
10F, Building 5, No.2388 ChenHang Road, Minhang District, Shanghai, China (Zip: 201114)
TEL:86-21-6422-0458 ext.279
e-mail: levi.lu@topco-global.com